DocumentCode :
2616200
Title :
Analysis on the temperature dependent characteristics of SiGe HBTs
Author :
Liang, C.-S. ; Pei, Z. ; Hsu, Y.-M. ; Pan, T.-M. ; Liu, Y.-H. ; Liu, C.W. ; Lu, S.C. ; Hsieh, W.-Y. ; Tsai, M.-J.
Author_Institution :
Electron. Res. & Service Organ., ITRI, Hsinchu, Taiwan
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
178
Lastpage :
179
Abstract :
In this paper, the β of SiGe HBT shows negative temperature dependence could prevent thermal runaway is suitable for the radio frequency, high power applications was demonstrated and modeled. The breakdown voltage of HBT was measured as a function of reciprocal temperature. The current gain (β), the base open common-emitter breakdown voltages (BVCEO) and the collector-base breakdown voltage (BVCBO) are the three figures to evaluate the performance of SiGe HBT.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device breakdown; semiconductor device models; semiconductor materials; SiGe; SiGe HBT; collector-base breakdown voltage; common-emitter breakdown voltage; current gain; negative temperature dependence; thermal runaway; Boron; Equations; Feedback; Germanium silicon alloys; Heterojunction bipolar transistors; Performance gain; Radio frequency; Silicon germanium; Temperature dependence; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272050
Filename :
1272050
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2616200
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