DocumentCode :
2616209
Title :
Low-frequency noise characteristics of 0.13 μm In0.65GaAs p-HEMT under the influence of impact ionization induced hole current
Author :
Kim, Tae-Woo ; Kim, Dae-Hyun ; Kang, In-Ho ; Kim, Jeong-Hoon ; Seo, Kwang-Seok ; Song, Jong-In
Author_Institution :
Dept. of Inf. & Commun., Kwangju Inst. of Sci. & Technol., South Korea
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
182
Lastpage :
183
Abstract :
The paper presents the investigation of the low- frequency noise characteristics of D-mode and E-mode 0.13 μm In0.65GaAs p-HEMT under influence of impact ionisation induced gate hole current. The D-mode p-HEMT having a InP Schottky gate showed Lorentzian low-frequency noise components and drift of corner frequency due to drain bias change, while the InAlAs gate E-mode p-HEMT showed no change in behaviour due to the reduction of gate hole current.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device noise; semiconductor epitaxial layers; 0.13 micron; In0.65GaAs; InAlAs gate E-mode p-HEMT; InP Schottky gate; Lorentzian low-frequency noise components; corner frequency; gate hole current reduction; impact ionization induced hole current; Epitaxial layers; Frequency; Gallium arsenide; HEMTs; Impact ionization; Indium gallium arsenide; Indium phosphide; Low-frequency noise; MODFETs; Semiconductor device noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272051
Filename :
1272051
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2616209
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