Title :
A tunable X-band SiGe HBT single stage cascode LNA
Author :
Dogan, Mustafa ; Tekin, Ibrahim
Abstract :
This paper presents an X-band silicon-germanium (SiGe) single stage cascode tunable low-noise amplifier (LNA) for active phased array transmit/receive modules. LNA is implemented by using IHP SiGe heterojunction bipolar transistors (HBTs) 0.25-μm SGB25V technology. Cadence is used in collaboration with ADS during sc hematic and lay out de sign and the results depict that de signed LNA dissipates 15.36 mW from an 2. 4 V DC power supply and the maximum gain around 18 dB in X-band while not exceeding the 2.4 dB noise figure (NF). Reverse gain of the LNA is very low (<;-40 dB). Input terminal is matched so that S11 is below -10 dB in X-band.
Keywords :
antenna phased arrays; germanium; heterojunction bipolar transistors; low noise amplifiers; silicon; DC power supply; Ge; LNA; Si; X band silicon germanium single stage cascode tunable low noise amplifier; active phased array receive module; active phased array transmit module; heterojunction bipolar transistor; power 15.36 mW; size 0.25 mum; Arrays; Gain; Impedance; Impedance matching; Noise measurement; Silicon germanium; Tuning; Low-noise ampli fier (LNA); X-band; heteroj unction bipola r transistor (HBT); noise figure (NF); silicon-germanium (SiGe);
Conference_Titel :
Microwave Symposium (MMS), 2010 Mediterranean
Conference_Location :
Guzelyurt
Print_ISBN :
978-1-4244-7241-3
DOI :
10.1109/MMW.2010.5605144
