DocumentCode :
2616239
Title :
Noise in metamorphic AlGaAsSb/InGaAs/AlGaAsSb HEMTs
Author :
Webster, Richard T. ; Anwar, A.F.M.
Author_Institution :
Air Force Res. Lab., Hanscom AFB, MA, USA
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
186
Lastpage :
187
Abstract :
In this paper, we presents the first measurement of minimum noise figure in AlGaAsSb/InGaAs/AlGaAsSb metamorphic quantum well HEMTs (MHEMTs). MHEMTs allow the development of InGaAs-based HEMTs on inexpensive GaAs substrates in contrast to the rather expensive InP-substrates. A measured low noise figure, Fmin is a function of frequency at different gate biases. This provides an attractive alternative technology for the realization of low noise millimeter wave devices.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; noise measurement; quantum well devices; semiconductor device measurement; semiconductor device noise; AlGaAsSb-InGaAs-AlGaAsSb; AlGaAsSb/InGaAs/AlGaAsSb metamorphic quantum well HEMTs; GaAs substrates; InP-substrate; gate bias; low noise millimeter wave devices; metamorphic high electron mobility transistor; noise figure; Frequency measurement; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Millimeter wave measurements; Millimeter wave technology; Noise figure; Noise measurement; mHEMTs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272053
Filename :
1272053
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2616239
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