Temperature effects on the performance of 4-port transformers

This paper presents the temperature effects on the performance of 4-port transformer. The transformer is fabricated on the silicon substrate using 0.18 μm CMOS process technique measured and characterised over the temperature range from -30 °C to 125 °C. At lower frequencies the effective resistance is dominated with metal resistance and increases with increasing temperature due to positive resistivity temperature coefficient of the metal trace. Magnetic coupling (K), mutual-inductance (M) and quality factor (Q) versus frequency curves for one winding of the transformer at different temperatures shows that at higher frequencies, neither M nor L dominate magnetic coupling (K).