Ultra high speed, very low power InSb-based quantum well FETs for logic applications

For the first time we demonstrate an InSb based quantum well FET, which uses a semi-insulating GaAs substrate, an InSb quantum well confined between layers of InAlSb and a Schottky barrier gate. This device is shown to exhibit far superior leakage and breakdown performance compared with the earlier device, with the Schottky gate promising much better transconductance and reproducibility than the deposited oxide. Experimental results for 0.4 μm gate length devices are shown along with physically based numerical device simulation results on devices scaled down to 100 nm gate length that demonstrate extremely high performance(1 THz at 0.5 V supply) and low device leakage.