Title :
Simulation of Be diffusion in InGaAs epitaxial layers in the case of point defect nonequilibrium
Author :
Gautier, S. ; Koumetz, S. ; Marcon, J. ; Ketata, K. ; Ketata, M. ; Launay, P.
Author_Institution :
LCIA, Inst. Nat. des Sci. Appliques, Rouen, France
Abstract :
Beryllium diffusion during post-growth annealing has been investigated in InGaAs epitaxial layers. Under point defect nonequilibrium conditions, a Kick-out Diffusion model considering neutral Be interstitial species and charged point defects has been studied. Then, a General Substitutional-Interstitial Diffusion model based on simultaneous diffusion by Dissociative and Kick-out mechanisms is proposed. Simulated curves are compared with experimental profiles and good agreement is obtained
Keywords :
III-V semiconductors; beryllium; diffusion; gallium arsenide; impurity-defect interactions; indium compounds; interstitials; rapid thermal annealing; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor process modelling; Be diffusion simulation; InGaAs epitaxial layers; InGaAs:Be; RTA; SIMS diffusion profiles; charged point defects; dissociative diffusion mechanism; general substitutional-interstitial diffusion model; kick-out diffusion model; neutral Be interstitial species; point defect nonequilibrium; post-growth annealing; Computer aided software engineering; Degradation; Doping; Epitaxial layers; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Rapid thermal annealing; Semiconductor process modeling; Zinc;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610089
