Title :
Plasma wave electronics devices
Author :
Ryzhii, V. ; Shur, M.S.
Author_Institution :
Comput. Solid State Phys., Univ. of Aizu, Japan
Abstract :
In deep submicron field effect transistors, the velocity of the surface plasma waves is more than an order of magnitude higher that the electron drift velocity and, therefore, excitation, propagation and generation of these waves should allow for operation at terahertz frequencies. In the plasma wave excitation regime, deep submicron transistors with high electron mobility could be used as tunable resonant detectors of terahertz radiation.
Keywords :
electron mobility; field effect transistors; plasma waves; semiconductor plasma; submillimetre wave transistors; electron drift velocity; electron mobility; plasma wave electronics devices; submicron field effect transistors; surface plasma waves; terahertz radiation; Electron mobility; FETs; Frequency; HEMTs; MODFETs; Plasma waves; Radiation detectors; Resonance; Submillimeter wave propagation; Surface waves;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272060