Title :
InAlAsSb/InGaSb double heterojunction bipolar transistor
Author :
Magno, R. ; Boos, J.B. ; Campbell, P.M. ; Bennett, B.R. ; Glaser, E.R. ; Ancona, M.G. ; Tinkham, B.P. ; Park, D. ; Papanicolaou, N.A. ; Ikossi, K. ; Shanabrook, B.V. ; Mohney, S.E.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
In this paper we report on the development of an npn double bipolar transistor with an InGaSb base and InAlAsSb alloys for the emitter and collector. The combination of alloys with a lattice constant of 6.2 a is illustrated. Silvaco simulation indicate that large collector currents, Ic, are possible with this system at smaller base emitter voltages, VBE, than are measured in the InP based HBT. An important advantage of this system is that the conduction band offset between the InGaSb base and the InAlAsSb may be tuned over a large range while maintaining large valence band offsets that are useful for minimizing parasitic base currents.
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; gallium compounds; heterojunction bipolar transistors; indium compounds; lattice constants; semiconductor device models; valence bands; InAlAsSb-InGaSb; InAlAsSb/InGaSb double heterojunction bipolar transistor; Silvaco simulation; conduction band; lattice constant; npn double bipolar transistor; valence band; Breakdown voltage; Current density; Current measurement; Doping; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Lattices; System testing;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272061
