Improved reliability of AlGaAs/GaAs heterojunction bipolar transistors with a strain-relaxed base

Author

Sugahara, H. ; Nagano, J. ; Nittono, T. ; Ogawa, K.

Author_Institution

NTT LSI Lab., Kanagawa, Japan

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

115

Lastpage

118

Abstract

The authors reveal a key to improving the life of MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base. In addition to presenting new findings on current gain degradation properties, it is shown that the importance of lattice strain relaxation in a carbon-doped base layer. Indium was incorporated into C-doped GaAs to relax strain by controlling the lattice constant in the base layer, which was slightly shrunk by carbon doping. Although lifetime testing is still underway, the median life is estimated to be longer than 2.8 /spl times/ 10/sup 6/ hours and 1.1 /spl times/ 10/sup 5/ hours where the collector current density is 10 kA/cm/sup 2/and 50 kA/cm/ /sup 2/, respectively.<>

Keywords

III-V semiconductors; aluminium compounds; crystal defects; failure analysis; gallium arsenide; heterojunction bipolar transistors; life testing; semiconductor device reliability; semiconductor device testing; AlGaAs-GaAs; GaAs:C; GaAs:C,In; III-V semiconductors; MOCVD-grown; current gain degradation properties; epilayer structure; failure analysis; heterojunction bipolar transistors; improved reliability; lattice strain relaxation; lifetime testing; strain-relaxed base; Capacitive sensors; Degradation; Doping; Gallium arsenide; Heterojunction bipolar transistors; Indium; Lattices; Life estimation; Life testing; Strain control;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394489

Filename

394489