Title :
AC characterization of top-gated carbon nanotube field effect transistors
Author :
Singh, D.V. ; Jenkins, K.A. ; Appenzeller, J. ; Wong, H.-S.P.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
This paper presents the first demonstration of CNFET operation at frequencies as high as 100 MHz. The AC characterization of CNFETs at significantly higher frequencies is possible using a spectrum analyzer, if the cross-talk between the gate and the drain is sufficiently small. The measured cross-talk power, PCT on quartz is consistent with theoretical predictions and sufficiently small to measured the CNFET response up to several hundred MHz.
Keywords :
carbon nanotubes; field effect transistors; nanotube devices; 100 MHz; AC characterization; C; cross talk; drain; gate; quartz; top gated carbon nanotube field effect transistors; Bandwidth; CNTFETs; Capacitance measurement; Electrical resistance measurement; Frequency measurement; Impedance measurement; Oscilloscopes; Spectral analysis; Time measurement; Transmission line measurements;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272062