Minority carrier generation in very thin silicon on insulator films

Summary form only given. In partially depleted films, an adaptation of the Zerbst technique can be used for depletion-mode MOSFETs by measuring the transient drain current. Two different methods for the analysis of this transient signal are proposed. In the first method, an appropriate fitting procedure of the experimental curve provides the so-called effective generation lifetime. Distinction is made by monitoring the importance of the sidewalls which increases from wide to narrow transistors or from edgeless to multi-edge configurations. The effective surface generation rate is also obtained from this analysis. This includes the contributions of the velocity generation of the front interface and the minority carrier generation and diffusion from the neutral region. The second method is based on a DLTS-like processing of the current transients. These techniques were used to study several SIMOX and recrystallized SOI samples; the substrate was used as a second gate in order to determine the properties of the back interface and the lifetime profile in the vertical direction