DocumentCode :
2616381
Title :
GaAs IC reliability, the next generation
Author :
Roesch, W.J.
Author_Institution :
TriQuint Semiconductor, Beaverton, OR, USA
fYear :
1993
fDate :
10-13 Oct. 1993
Firstpage :
103
Lastpage :
106
Abstract :
Improvements in semiconductor reliability are constantly being expected and so far, they have been achieved. A historical perspective is presented which provides evidence regarding changes in the way people think about reliability, for GaAs MESFET integrated circuits, in particular. Comparisons to silicon reliability history, and between old and new philosophies are made. Although not intended as a panacea, the direction towards measuring, analyzing, and controlling the variability of all input parameters to reliability is discussed as the key to reaching the next generation.<>
Keywords :
III-V semiconductors; MESFET integrated circuits; gallium arsenide; integrated circuit reliability; reliability; GaAs; IC reliability; III-V semiconductors; MESFET integrated circuits; next generation; reliability evolution; reliability measurement; Circuit optimization; Costs; Gallium arsenide; History; Integrated circuit interconnections; MESFETs; Silicon; Temperature; Testing; Volume measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
Type :
conf
DOI :
10.1109/GAAS.1993.394491
Filename :
394491
Link To Document :
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