Digital dynamic frequency dividers for broadband application up to 60 GHz

Author

Thiede, A. ; Berroth, M. ; Tasker, P. ; Schlechtweg, M. ; Seibel, J. ; Raynor, B. ; Hulsmann, A. ; Kohler, K. ; Bronner, W.

Author_Institution

Fraunhofer-Inst. for Appl. Solid State Phys., Freiburg, Germany

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

91

Lastpage

94

Abstract

A broadband dynamic frequency divider based on pseudomorphic Al/sub 0.2/Ga/sub 0.8/As/In/sub 0.25/Ga/sub 0.75/As MODFETs and passive loads is presented. Stable operation from 28 GHz up to 51 GHz with a power consumption of 440 mW could be shown. SPICE network simulation predicts operation in the 35 GHz - 60 GHz range for a divider circuit using an advanced E/D AlGaAs/InGaAs MODFET process.<>

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; SPICE; aluminium compounds; circuit analysis computing; direct coupled FET logic; field effect MMIC; field effect logic circuits; frequency dividers; gallium arsenide; indium compounds; 28 to 51 GHz; 35 to 60 GHz; 440 mW; Al/sub 0.2/Ga/sub 0.8/As-In/sub 0.25/Ga/sub 0.75/As; DCFL; III-V semiconductors; MODFETs; SPICE network simulation; advanced E/D type; broadband dynamic frequency divider; digital frequency dividers; passive loads; power consumption; pseudomorphic; stable operation; Circuit synthesis; Delay effects; Dry etching; Flip-flops; Frequency conversion; Gallium arsenide; HEMTs; MODFET circuits; Pulse inverters; Resistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394492

Filename

394492