Title :
Negative differential resistance in silicon-molecule heterostructure
Author :
Rakshit, T. ; Geng-Chiau Liang ; Ghosh, A. ; Datta, Soupayan
Author_Institution :
Purdue University
Abstract :
This paper demonstrates the negative differential resistance in silicon-molecule heterostructure. The NDR is expected to occur in the positive bias direction for molecules on degenerately doped p-type silicon substrates and in the negative bias direction for degenerately doped n-type substrates.
Keywords :
negative resistance; organic compounds; silicon; NDR; Si; degenerately doped n type substrates; degenerately doped p type silicon substrates; negative bias direction; negative differential resistance; positive bias direction; silicon-molecule heterostructure; Absorption; Energy states; Logic devices; Microscopy; Molecular electronics; Photonic band gap; Shape; Silicon; Substrates; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272064
