DocumentCode
2616445
Title
Buried air gap structure for improving the breakdown voltage of SOI power MOSFET´s
Author
Jeon, B.C. ; Kim, D.Y. ; Lee, Y.S. ; Oh, J.K. ; Han, M.K. ; Choi, Y.I.
Author_Institution
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
Volume
3
fYear
2000
fDate
2000
Firstpage
1061
Abstract
A novel SOI power MOSFET employing a buried air gap structure (BAGS) is proposed and verified by numerical simulation. Higher breakdown voltage is achieved in proposed structure than conventional ones, because the buried air gap reduces the vertical electric field near the drain junction efficiently. It is shown that the drain-substrate capacitance is reduced due to the low dielectric constant of the buried air gap
Keywords
numerical analysis; power MOSFET; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; SOI power MOSFET; breakdown voltage improvement; buried air gap structure; dielectric constant; drain junction; drain-substrate capacitance; numerical simulation; vertical electric field; Capacitance; Dielectric constant; Dielectrics and electrical insulation; Doping; MOSFET circuits; Medical simulation; Numerical simulation; Power MOSFET; Power integrated circuits; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Motion Control Conference, 2000. Proceedings. IPEMC 2000. The Third International
Conference_Location
Beijing
Print_ISBN
7-80003-464-X
Type
conf
DOI
10.1109/IPEMC.2000.882975
Filename
882975
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