Title :
Buried air gap structure for improving the breakdown voltage of SOI power MOSFET´s
Author :
Jeon, B.C. ; Kim, D.Y. ; Lee, Y.S. ; Oh, J.K. ; Han, M.K. ; Choi, Y.I.
Author_Institution :
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
A novel SOI power MOSFET employing a buried air gap structure (BAGS) is proposed and verified by numerical simulation. Higher breakdown voltage is achieved in proposed structure than conventional ones, because the buried air gap reduces the vertical electric field near the drain junction efficiently. It is shown that the drain-substrate capacitance is reduced due to the low dielectric constant of the buried air gap
Keywords :
numerical analysis; power MOSFET; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; SOI power MOSFET; breakdown voltage improvement; buried air gap structure; dielectric constant; drain junction; drain-substrate capacitance; numerical simulation; vertical electric field; Capacitance; Dielectric constant; Dielectrics and electrical insulation; Doping; MOSFET circuits; Medical simulation; Numerical simulation; Power MOSFET; Power integrated circuits; Silicon on insulator technology;
Conference_Titel :
Power Electronics and Motion Control Conference, 2000. Proceedings. IPEMC 2000. The Third International
Conference_Location :
Beijing
Print_ISBN :
7-80003-464-X
DOI :
10.1109/IPEMC.2000.882975
