Modeling of nonvolatile floating gate quantum dot memory

This paper describes a model to simulate electrical characteristics of nonvolatile floating gate quantum dot memory (NVFGQDM) cells during read/write operations. Current-voltage characteristics are obtained using BSIM3v3. Tunneling current is computed based on tunneling of electrons from the channel to the floating quantum dots forming the gate. The maximum number of electrons on a dot is calculated using surface electric field and breakdown voltage of the tunneling dielectric material. Capacitance-voltage characteristics are calculated by solving self-consistently the Schrodinger and Poisson equations.