Title :
A novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs
Author :
Maeda, T. ; Numata, K. ; Tokushima, M. ; Ishikawa, M. ; Fukaishi, M. ; Hida, H. ; Ohno, Y.
Author_Institution :
NEC Corp., Tsukuba, Ibaraki, Japan
Abstract :
The authors describe a new GaAs static flip flop, called TD-FF (tri-state driver flip flop), for ultra-low supply voltage GaAs heterojunction FET LSIs. The TD-FF operates at a data rate of 10 Gbps with 18 mW power consumption at 0.8 V supply voltage. The 10 Gbps power consumption is 1/5 of the minimum value reported for D-FFs so far. The authors also demonstrate a 1/8 static frequency divider IC using the TD-FF configuration. This IC operates up to 10 GHz with 38 mW at 0.8 V supply voltage.<>
Keywords :
III-V semiconductors; JFET integrated circuits; direct coupled FET logic; driver circuits; field effect logic circuits; flip-flops; frequency dividers; gallium arsenide; very high speed integrated circuits; 0.8 V; 10 GHz; 10 Gbit/s; 18 mW; 38 mW; DCFL; GaAs; III-V semiconductor; heterojunction FET LSIs; high-speed; low-power; static flip flop; static frequency divider IC; tri-state driver flip flop; ultralow supply voltage; Circuit noise; Clocks; Coupling circuits; Energy consumption; FETs; Gallium arsenide; Helium; Latches; Sampling methods; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
DOI :
10.1109/GAAS.1993.394496
