Title :
Study of ZnO nanocluster formation within styrene-acrylic acid and styrene-methacrylic acid diblock copolymers on Si and SiO2 surfaces
Author :
Ali, H.A. ; Iliadis, A.A. ; Lee, U.
Author_Institution :
Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA
Abstract :
Self-assembly of ZnO nanoclusters on Si and SiO2/Si surfaces using two different diblock copolymers, polystyrene-acrylic acid and polystyrene-methacrylic acid, is reported in this paper. The conversions of ZnCl2 to ZnO nanoclusters are verified and evaluated using X-ray photoelectron spectroscopy (XPS). The high resolution spectra shows the electron peak at 1021.7 eV for ozone treated sample and the peak at 1021.8 eV for NH4OH treated sample. From AFM image it is found that the size distribution of ZnO is 150 to 250 nm and height distribution is 100 to 130 nm.
Keywords :
II-VI semiconductors; X-ray photoelectron spectra; atomic force microscopy; nanostructured materials; nanotechnology; self-assembly; semiconductor thin films; sputter etching; zinc compounds; 100 to 130 nm; 150 to 250 nm; AFM; Si; SiO2-Si; SiO2-Si surfaces; X-ray photoelectron spectroscopy; XPS; ZnO; ZnO nanocluster formation; atomic force microscopy; height distribution; ozone; polystyrene-acrylic acid; polystyrene-methacrylic acid; size distribution; styrene-acrylic acid; styrene-methacrylic acid diblock copolymers; Atomic force microscopy; Chemical processes; Educational institutions; Etching; Military computing; Scanning electron microscopy; Self-assembly; Surface morphology; Surface treatment; Zinc oxide;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272067
