Title :
Junction temperature analysis of IGBT devices
Author :
Pan, Zhiguo ; Jiang, Xinjian ; Lu, Haiwei ; Huang, Lipei ; Azuma, Satoshi ; Kimata, Masahiro ; Seto, Makoto
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
Abstract :
The junction temperature of IGBT is the key factors that could influence the whole system´s reliability and efficiency. An electro-thermal method was implemented to estimate the junction temperature of IGBT devices in this paper. The junction temperature of power devices was found out based on the power losses of IGBT devices and the transient thermal impedance model. The comparison between experiment using a 50 A/600 V IGBT module and calculation results shows that this method is effective
Keywords :
insulated gate bipolar transistors; losses; p-n junctions; power bipolar transistors; semiconductor device reliability; thermal analysis; 50 A; 600 V; IGBT devices; efficiency; electro-thermal method; junction temperature analysis; power losses; reliability; transient thermal impedance model; Impedance; Insulated gate bipolar transistors; Multichip modules; Power measurement; Power semiconductor devices; Power system transients; Semiconductor diodes; Switches; Temperature measurement; Temperature sensors;
Conference_Titel :
Power Electronics and Motion Control Conference, 2000. Proceedings. IPEMC 2000. The Third International
Conference_Location :
Beijing
Print_ISBN :
7-80003-464-X
DOI :
10.1109/IPEMC.2000.882977
