Junction temperature analysis of IGBT devices

Author

Pan, Zhiguo ; Jiang, Xinjian ; Lu, Haiwei ; Huang, Lipei ; Azuma, Satoshi ; Kimata, Masahiro ; Seto, Makoto

Author_Institution

Dept. of Electr. Eng., Tsinghua Univ., Beijing, China

Volume

3

fYear

2000

fDate

2000

Firstpage

1068

Abstract

The junction temperature of IGBT is the key factors that could influence the whole system´s reliability and efficiency. An electro-thermal method was implemented to estimate the junction temperature of IGBT devices in this paper. The junction temperature of power devices was found out based on the power losses of IGBT devices and the transient thermal impedance model. The comparison between experiment using a 50 A/600 V IGBT module and calculation results shows that this method is effective

Keywords

insulated gate bipolar transistors; losses; p-n junctions; power bipolar transistors; semiconductor device reliability; thermal analysis; 50 A; 600 V; IGBT devices; efficiency; electro-thermal method; junction temperature analysis; power losses; reliability; transient thermal impedance model; Impedance; Insulated gate bipolar transistors; Multichip modules; Power measurement; Power semiconductor devices; Power system transients; Semiconductor diodes; Switches; Temperature measurement; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2000. Proceedings. IPEMC 2000. The Third International

Conference_Location

Beijing

Print_ISBN

7-80003-464-X

Type

conf

DOI

10.1109/IPEMC.2000.882977

Filename

882977