• DocumentCode
    2616521
  • Title

    Growth properties of self-assembled InAs quantum dots on a thin tensile-strained layer

  • Author

    Kim, Jin Soo ; Lee, Jin Hong ; Hong, Sung Ui ; Han, Won Seok ; Kwack, Ho-Sang ; Oh, Dae Kon

  • Author_Institution
    Basic Res. Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    221
  • Lastpage
    222
  • Abstract
    The introduction of a thin tensile-strained GaAs and In0.32 Ga0.68As right below the QD layer modulates the structural and optical properties of self-assembled InAs QDs embedded in an InAlGaAs matrix. The AFM images indicated that the average size of InAs QDs on GaAs/InAlGaAs is decreased compared to that without the thin GaAs layer, but ones on In0.32Ga0.68As/InAlGaAs are increased with more isotropic shape.
  • Keywords
    III-V semiconductors; atomic force microscopy; gallium arsenide; photoluminescence; semiconductor quantum dots; semiconductor thin films; 293 to 298 K; AFM images; GaAs; GaAs layer; GaAs-InAlGaAs; growth properties; optical properties; photoluminescence spectra; self assembled InAs quantum dots; structural properties; thin tensile strained layer; Atomic force microscopy; Atomic measurements; Force measurement; Gallium arsenide; Indium phosphide; Optical buffering; Optical modulation; Photoluminescence; Quantum dots; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1272070
  • Filename
    1272070
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2616521