DocumentCode :
2616521
Title :
Growth properties of self-assembled InAs quantum dots on a thin tensile-strained layer
Author :
Kim, Jin Soo ; Lee, Jin Hong ; Hong, Sung Ui ; Han, Won Seok ; Kwack, Ho-Sang ; Oh, Dae Kon
Author_Institution :
Basic Res. Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
221
Lastpage :
222
Abstract :
The introduction of a thin tensile-strained GaAs and In0.32 Ga0.68As right below the QD layer modulates the structural and optical properties of self-assembled InAs QDs embedded in an InAlGaAs matrix. The AFM images indicated that the average size of InAs QDs on GaAs/InAlGaAs is decreased compared to that without the thin GaAs layer, but ones on In0.32Ga0.68As/InAlGaAs are increased with more isotropic shape.
Keywords :
III-V semiconductors; atomic force microscopy; gallium arsenide; photoluminescence; semiconductor quantum dots; semiconductor thin films; 293 to 298 K; AFM images; GaAs; GaAs layer; GaAs-InAlGaAs; growth properties; optical properties; photoluminescence spectra; self assembled InAs quantum dots; structural properties; thin tensile strained layer; Atomic force microscopy; Atomic measurements; Force measurement; Gallium arsenide; Indium phosphide; Optical buffering; Optical modulation; Photoluminescence; Quantum dots; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272070
Filename :
1272070
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2616521
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