Control of emission wavelength of InAs quantum dots grown by various growth techniques

The emission wavelength of InAs-QDs on GaAs substrates are controlled by using five different growth techniques: (a) QD1 sample was grown in a pure GaAs matrix. (b) QD2 sample was covered with In_0.13Ga_0.87As on QD1 sample. (c) QD3 sample was grown by In interruption during QD growth in a pure GaAs matrix, (d) QD4 sample was covered with In_0.13Ga_0.87As SRL on QD3 sample and (e) QD5 sample was covered with InAs/GaAs 10 period on QD3 sample. Schematic of the five type samples are illustrated and In interruption for InAs-QDs, PL spectra of five InAs-QDs samples measured at room temperature are studied.