Title :
An L-band ultra low power consumption monolithic low noise amplifier [for mobile communication]
Author :
Nakatsugawa, M. ; Yamaguchi, Y. ; Muraguchi, M.
Author_Institution :
NTT Radio Commun. Syst. Lab., Kanagawa, Japan
Abstract :
A low-power-consumption variable-gain low noise amplifier (LNA) is developed. In order to achieve low noise, high gain, low distortion and low power consumption simultaneously, a cascode connection between an enhancement-mode GaAs MESFET (EFET) and a depletion-mode GaAs (DFET) is employed. The amplifier shows state-of-the-art performance with NF of 2.0 dB, gain of 12.2 dB and IP3 of 5.1 dBm at 1.9 GHz at power consumption of 2.0 mW, and NF of 2.4 dB, gain of 10.2 dB and IP3 of 2.7 dBm at 1 mW. Moreover, the LNA´s gain is controllable according to the receiving level and it can be turned off while the transmitter is operating.<>
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; field effect MMIC; gallium arsenide; mobile radio; 1 mW; 1.9 GHz; 10.2 dB; 12.2 dB; 2 dB; 2 mW; 2.4 dB; GaAs; III-V semiconductor; L-band; MESFET; MMIC; cascode connection; controllable gain; depletion-mode; enhancement-mode; high gain; low distortion; mobile communication; monolithic low noise amplifier; ultralow power consumption; variable-gain; Batteries; Circuits; Energy consumption; Gallium arsenide; L-band; Low-noise amplifiers; Mobile communication; Noise measurement; Performance gain; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
DOI :
10.1109/GAAS.1993.394503
