High performance integrated PA, T/R switch for 1.9 GHz personal communications handsets

Author

O´Sullivan, P. ; St Onge, G. ; Heaney, E. ; McGrath, F. ; Kermarrec, C.

Author_Institution

M/A-COM IC Design Center, Lowell, MA, USA

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

33

Lastpage

35

Abstract

The authors present a state of the art power amplifier and T/R switch GaAs MMIC product for the 1.9 GHz Japanese PHP system. The design consists of a single die (1.8 mm /spl times/ 1.2 mm) in a 28 pin QSOP surface mount plastic package. The two stage power amplifier exhibits 28 dB gain with greater than 44% PAE at a P1dB of 23 dBm. The adjacent channel interference level is better than 60 dBc at /spl plusmn/600 kHz when tested at this rated output power. The T/R switch exhibits 1 dB insertion loss, 30 dB isolation and OIP3 of greater than 44 dBm when used with two 0.25 watt tones.<>

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; field effect MMIC; field effect transistor switches; gallium arsenide; integrated circuit packaging; mobile radio; plastic packaging; power amplifiers; power field effect transistors; power integrated circuits; power semiconductor switches; surface mount technology; telephone sets; transceivers; 0.25 W; 1 dB; 1.9 GHz; 28 dB; GaAs; III-V semiconductor; Japanese PHP system; MESFET; MMIC product; QSOP surface mount plastic package; T/R switch; high performance; personal communications handsets; portable handsets; single die; two stage power amplifier; Gain; Gallium arsenide; Insertion loss; Interchannel interference; MMICs; Plastic packaging; Power amplifiers; Power generation; Switches; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394506

Filename

394506