DocumentCode
2616631
Title
The field effect diode
Author
Taghibakhsh, Farhad
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
236
Lastpage
237
Abstract
The fabrication of field effect diode (FED) as a planar pin diode with two gates over its intrinsic region using SOI technology is presented in this paper. The voltage applied to the gates, changes the barrier height against carriers and therefore modulates diode current. Based on an accurate numeric simulation, the operation of the device has been explained, the analytical I-V relationship has been extracted, dynamic characteristics of the device has been calculated and the effect of device parameters on its electrical behavior has been studied. Obtained results show that the FED realizes a voltage controlled voltage source.
Keywords
active networks; elemental semiconductors; field effect devices; p-i-n diodes; semiconductor device models; silicon-on-insulator; SOI technology; Si; analytical I-V relationship; device parameters; diode current; dynamic properties; field effect diode; intrinsic region; numeric simulation; planar pin diode; silicon on insulator; voltage controlled voltage source; Analytical models; Diodes; Doping; Equations; Numerical simulation; Pulse circuits; Switching frequency; Threshold voltage; Time factors; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272077
Filename
1272077
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