Title :
Interfacial oxide thickness determination and interface studies of HfO2/SiO2/Si dielectrics
Author :
Xie, Ling ; Zhao, Yijie ; White, Marvin H.
Author_Institution :
Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
X-ray photoelectron spectroscopy (XPS) has been applied to the high-K/Si system to analyze chemical bonding structure, high-K/Si system interfaces, and interfacial silicon oxide layer formations. Also we derive an expression to determine the thickness of an interfacial oxide layer based on ARXPS electron intensity ratios and compare our results with experimental values obtained from ellipsometer measurements. In addition, we describe the formation of HfO2/Si interfacial layers together with their thermal stability and chemical structure. Finally we present valence band offset measurements obtained with HRXPS to determine band structure.
Keywords :
X-ray photoelectron spectra; dielectric materials; dielectric thin films; elemental semiconductors; hafnium compounds; interface structure; silicon; silicon compounds; thermal stability; valence bands; HRXPS; HfO2-SiO2-Si; HfO2/SiO2/Si dielectrics; X-ray photoelectron spectroscopy; XPS; band structure; chemical bonding structure; chemical structure; electron intensity ratios; ellipsometer measurements; interfacial oxide layer; interfacial oxide thickness determination; thermal stability; valence band offset measurements; Bonding; Chemical analysis; Electrons; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Silicon; Spectroscopy; Thermal stability; Thickness measurement;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272081
