Experimental 10 Gbit/s transmission systems and its IC technology

Author

Hagimoto, K.

Author_Institution

NTT Transmission Syst. Lab., Kanagawa, Japan

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

7

Lastpage

10

Abstract

High-speed IC technology is essential to construct high-speed optical transmission systems. A family of regenerative repeater circuits was designed and fabricated using GaAs IC which were also equipped with erbium-doped fiber amplifiers. These experimental 10 Gb/s repeaters were tested under field environment conditions for half a year in the Tokai area of Japan and it was confirmed that all devices and equipment operated stably. The authors propose and demonstrate a new configuration for an ultra-high-speed transmitter and receiver utilizing optical amplifiers at 20 Gb/s.<>

Keywords

III-V semiconductors; MESFET integrated circuits; bipolar digital integrated circuits; decision circuits; fibre lasers; field effect logic circuits; flip-flops; gallium arsenide; integrated circuit testing; integrated optoelectronics; optical receivers; optical repeaters; optical transmitters; timing circuits; very high speed integrated circuits; 10 Gbit/s; 20 Gbit/s; Er doped fiber amplifier; GaAs; HBT IC; III-V semiconductor; MESFET IC; OEIC; field environment conditions; flip-flop; high-speed IC; high-speed optical transmission systems; optical amplifiers; receiver; regenerative repeater circuits; timing extraction circuits; ultra-high-speed transmitter; Circuit testing; Erbium-doped fiber amplifier; Gallium arsenide; High speed integrated circuits; High speed optical techniques; Optical receivers; Optical transmitters; Photonic integrated circuits; Repeaters; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394510

Filename

394510