Title :
Ge pMOSFETs with MOCVD HfO2 gate dielectric
Author :
Wu, Nan ; Zhang, Qinschun ; Zhu, Chunxiang ; Li, M.F. ; Chan, DSH ; Chin, Albert ; Kwong, D.L. ; Bera, L.K. ; Balasubramanian, N. ; Du, A.Y. ; Tung, C.H. ; Liu, Haitao ; Sin, Johnny K O
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
Ge is a attractive material for alternative channel materials due to its high electron and hole mobility. Ge substrate is also a potential materials for supply scaling down to meet ITRS requirements. This work reports the Ge pMOSFET device fabrication and pMOSFET characteristics. The Ge substrate used in this work are (100) Sb doped n-type wafers with a resistivity of 1.04∼0.08 ohm*cm. Ge pMOSFET´s electrical performance like I-V curves, transfer curves and hole mobility are improved by surface nitridation and passivation of HfO2 gate dielectrics.
Keywords :
MOCVD; MOSFET; dielectric materials; dielectric thin films; electron mobility; elemental semiconductors; germanium; hafnium compounds; hole mobility; nitridation; passivation; semiconductor growth; semiconductor thin films; (100) Sb doped n-type wafers; 0.04 to 0.08 ohmcm; Ge pMOSFET device fabrication; Ge pMOSFET fabrication; Ge substrate; Ge-HfO2; MOCVD HfO2 gate dielectrics; Sb; channel material; current-voltage curves; electron mobility; hole mobility; metal-organic chemical vapour deposition; passivation; resistivity; surface nitridation; transfer curves; Annealing; Dielectrics; Hafnium oxide; Leakage current; MOCVD; MOS capacitors; MOSFET circuits; Surface treatment; Temperature; Very large scale integration;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272084
