Title :
Breakdown of a simple scaling rule of SOI MOSFETs and its prolong by thinning BOX
Author :
Hanajiri, T. ; Niizato, M. ; Aoto, K. ; Toyabe, T. ; Nakajima, Y. ; Morikawa, T. ; Sugano, T.
Author_Institution :
Bio-Nanoelectron. Res. Center, Toyo Univ., Saitama, Japan
Abstract :
In this paper, we analyse the causes of DIBL (Drain-Induced Barrier Lowering) at SOI/BOX interface by the device simulation. Simple scaling rule of SOI MOSFETs breaks down in ultra thin SOI MOSFETs with deep sub-micron gates, and that thinning of BOX layer as well as SOI layer is effective to the scaling rule. The electrical properties of SOI MOSFETs with BOX (Buried Oxide) layer of 10 nm and 1000 nm was characterized by contour mapping and potential profiles at interface leakage region.
Keywords :
MOSFET; leakage currents; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; 10 nm; 1000 nm; DIBL; MOSFET breakdown; SOI MOSFETs breakdown; Si; buried oxide; contour mapping; device simulation; drain induced barrier lowering; electrical properties; interface leakage region; potential profiles; scaling rule; silicon on insulator; thinning BOX; Electric breakdown; Leakage current; MOSFETs; Open area test sites; Silicon; Solid state circuits; Very large scale integration; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272088
