Breakdown of a simple scaling rule of SOI MOSFETs and its prolong by thinning BOX

Author

Hanajiri, T. ; Niizato, M. ; Aoto, K. ; Toyabe, T. ; Nakajima, Y. ; Morikawa, T. ; Sugano, T.

Author_Institution

Bio-Nanoelectron. Res. Center, Toyo Univ., Saitama, Japan

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

260

Lastpage

261

Abstract

In this paper, we analyse the causes of DIBL (Drain-Induced Barrier Lowering) at SOI/BOX interface by the device simulation. Simple scaling rule of SOI MOSFETs breaks down in ultra thin SOI MOSFETs with deep sub-micron gates, and that thinning of BOX layer as well as SOI layer is effective to the scaling rule. The electrical properties of SOI MOSFETs with BOX (Buried Oxide) layer of 10 nm and 1000 nm was characterized by contour mapping and potential profiles at interface leakage region.

Keywords

MOSFET; leakage currents; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; 10 nm; 1000 nm; DIBL; MOSFET breakdown; SOI MOSFETs breakdown; Si; buried oxide; contour mapping; device simulation; drain induced barrier lowering; electrical properties; interface leakage region; potential profiles; scaling rule; silicon on insulator; thinning BOX; Electric breakdown; Leakage current; MOSFETs; Open area test sites; Silicon; Solid state circuits; Very large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272088

Filename

1272088