Title :
Design and realization of eGaN FET DCDC converter
Author :
Zivanovic, Zoran B. ; Smiljakovic, Vladimir J.
Author_Institution :
IMTEL KOMUNIKACIJE AD, Belgrade, Serbia
Abstract :
This paper deals with the comparison between two forward converters. Converters, one with the silicon MOSFET and another with eGaN FET, are built and tested through lab measurements. Design steps are described and well documented with measurements results.
Keywords :
DC-DC power convertors; III-V semiconductors; elemental semiconductors; gallium compounds; integrated circuit design; power MOSFET; silicon; wide band gap semiconductors; DCDC converter; GaN; Si; eGaN FET; forward converters; silicon MOSFET; Inductors; Logic gates; MOSFET; Silicon; Switches; Temperature measurement; Figure of Merit; MOSFET; eGaN FET;
Conference_Titel :
Telecommunications Forum Telfor (TELFOR), 2014 22nd
Conference_Location :
Belgrade
Print_ISBN :
978-1-4799-6190-0
DOI :
10.1109/TELFOR.2014.7034489
