Design and fabrication of an InP-based moving waveguide 1×2 optical MEMS switch

Author

Pruessner, M.W. ; Kelly, D. ; Datta, M. ; Lim, H. ; Maboudian, R. ; Ghodssi, R.

Author_Institution

Maryland Univ., MD, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

280

Lastpage

281

Abstract

Design and fabrication of 1×2 InP-based MEMS moving waveguide optical switch with low switching voltage and low loss is presented. The basic layer structure of the waveguide is 4 μm thick and consists of 1.8 μm In_0.53Ga_0.47As sacrificial layer grown by MBE on a (100) semi-insulating InP substrate. Mechanical and optical design characteristics of this device is also presented. The waveguides are designed with Δn=0.02 and a cross section of 2 μm by 2 μm which minimizes the coupling loss between input and output waveguides.

Keywords

III-V semiconductors; gallium compounds; indium compounds; microswitches; optical couplers; optical switches; optical waveguides; semiconductor epitaxial layers; tensile strength; 1.8 micron; 4 micron; InGaAs; InP; InP-based moving waveguide; MBE layer; coupling loss; mechanical properties; microelectromechanical system; optical MEMS switch; optical properties; semi insulating InP substrate; waveguide layer structure; Indium phosphide; Micromechanical devices; Optical attenuators; Optical design; Optical device fabrication; Optical scattering; Optical switches; Optical waveguides; Suspensions; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272096

Filename

1272096