Technological hybridization for efficient runtime reconfigurable FPGAs

Author

Bruchon, N. ; Torres, L. ; Sassatelli, G. ; Cambon, G.

Author_Institution

UMR CNRS, Montpellier Univ.

fYear

2007

fDate

9-11 March 2007

Firstpage

29

Lastpage

34

Abstract

The goal of this paper is to propose an FPGA using emerging non volatile technologies for its configuration memory. Studies on magnetic memories have already been carried out (Bruchon et al., 2006) but solid electrolyte and phase change memories are also good candidates for such type of application. Features of these technologies can provide some interesting characteristics to the FPGA such as short writing time with non volatile technology. A small structure (RSRAM) for remanent SRAM is used to convert information from these technologies into electrical information. This structure naturally provides some more features like partial and shadowed reconfiguration

Keywords

field programmable gate arrays; integrated memory circuits; random-access storage; RSRAM; configuration memory; magnetic memories; nonvolatile technologies; partial reconfiguration; phase change memories; remanent SRAM; runtime reconfigurable FPGA; shadowed reconfiguration; solid electrolyte; technological hybridization; Field programmable gate arrays; Integrated circuit technology; Magnetic properties; Magnetic tunneling; Phase change materials; Phase change memory; Random access memory; Runtime; Solids; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI, 2007. ISVLSI '07. IEEE Computer Society Annual Symposium on

Conference_Location

Porto Alegre

Print_ISBN

0-7695-2896-1

Type

conf

DOI

10.1109/ISVLSI.2007.96

Filename

4208890