Design and fabrication of Schottky diode, on-chip RF power detector

Author

Jeon, Woochul ; Rodgers, John ; Melngailis, John

Author_Institution

Inst. Res. in Electron. & Appl. Phys., Maryland Univ., College Park, MD, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

294

Lastpage

295

Abstract

Schottky diodes are fast rectifying devices and can be used as RF power detectors. In this article we designed a mask set for fabricating Schottky diodes with reduced contact size and minimum series resistance between the n and n+ regions. Processing steps used are: patterning of SiO₂, n⁺ activation by rapid thermal annealing, e-beam Al deposition, and Al patterning. After fabricating the diodes, RF power detecting characteristics are measured by directly irradiating chips with RF power. In some cases, we also injected power by contact probes.

Keywords

Schottky diodes; aluminium; electron beam deposition; masks; ohmic contacts; rapid thermal annealing; rectifiers; silicon compounds; system-on-chip; Al patterning; RF power detecting properties; RF power irradiation; Schottky diodes; SiO₂ patterning; SiO₂-Al; electron beam Al deposition; mask; n⁺ activation; ohmic contact; on-chip RF power detector; rapid thermal annealing; rectifying devices; series resistance; Contact resistance; Detectors; Electrical resistance measurement; Fabrication; Power measurement; Radio frequency; Rapid thermal annealing; Rapid thermal processing; Schottky diodes; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272103

Filename

1272103