Title :
Design and fabrication of Schottky diode, on-chip RF power detector
Author :
Jeon, Woochul ; Rodgers, John ; Melngailis, John
Author_Institution :
Inst. Res. in Electron. & Appl. Phys., Maryland Univ., College Park, MD, USA
Abstract :
Schottky diodes are fast rectifying devices and can be used as RF power detectors. In this article we designed a mask set for fabricating Schottky diodes with reduced contact size and minimum series resistance between the n and n+ regions. Processing steps used are: patterning of SiO2, n+ activation by rapid thermal annealing, e-beam Al deposition, and Al patterning. After fabricating the diodes, RF power detecting characteristics are measured by directly irradiating chips with RF power. In some cases, we also injected power by contact probes.
Keywords :
Schottky diodes; aluminium; electron beam deposition; masks; ohmic contacts; rapid thermal annealing; rectifiers; silicon compounds; system-on-chip; Al patterning; RF power detecting properties; RF power irradiation; Schottky diodes; SiO2 patterning; SiO2-Al; electron beam Al deposition; mask; n+ activation; ohmic contact; on-chip RF power detector; rapid thermal annealing; rectifying devices; series resistance; Contact resistance; Detectors; Electrical resistance measurement; Fabrication; Power measurement; Radio frequency; Rapid thermal annealing; Rapid thermal processing; Schottky diodes; Semiconductor device measurement;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272103
