Effect of polySi/high-κ interface on device reliability

Author

Wang, X.W. ; Bu, H.M. ; Ma, T.P. ; Tseng, H. ; Tobin, Phil

Author_Institution

Yale Univ., New Haven, CT, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

324

Lastpage

325

Abstract

The effects of hot-carrier injection on the reliability of both n-and p-channel MOSFETs with HfO₂ as the gate dielectric is reported in this paper. The polySi/HfO₂/Si MOS structure illustrates possible structural differences between the polySi/HfO₂ interface and the HfO₂/substrate-Si interface. Electron trapping probability is dominant in nMOSFET during constant-voltage stress over the entire voltage range, while in pMOSFET, hole trapping probability is appreciable above the stress voltage of -2.6 V. Gate leakage currents are measured using a carrier separation technique. Stress voltage dependence of electron trapping probability diminishes as an ultra-thin SiN_x layer is added in between HfO₂ and the poly silicon gate.

Keywords

MOSFET; dielectric materials; electron traps; elemental semiconductors; hafnium compounds; hole traps; hot carriers; leakage currents; semiconductor device reliability; silicon; silicon compounds; HfO₂/substrate-Si interface; Si-HfO₂-Si-SiN; carrier separation; constant voltage stress; device reliability; electron trapping probability; gate dielectric; gate leakage currents; hole trapping probability; hot carrier injection; n-channel MOSFET; p-channel MOSFET; polySi-high-κ interface; polySi/HfO₂ interface; polySi/HfO₂/Si MOS structure; stress voltage dependence; ultra thin SiN_x layer; Charge carrier processes; Current measurement; Dielectric substrates; Electron traps; Hafnium oxide; Hot carrier injection; Leakage current; MOSFET circuits; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272116

Filename

1272116