Point defects in ion implanted p-type silicon

Electrically active point defects in Cz p-type Silicon (boron doped) created by low dose ion implantation of ¹H, ¹¹ B, ²⁸Si and ⁷⁴Ge have been studied using deep level transient spectroscopy. Doses in the range 10⁷ and 10¹⁰ cm^-2 and energies from 0.32 MeV to 7 MeV are used. Defects involving vacancies, interstitials and impurities are identified. In such a low dose regime, no defects related to the implanted species are observed. The formation of these defects is studied as a function of dose, sample depth and ion mass. In addition to substitutional carbon and interstitial oxygen as impurities in the as grown silicon, presence of one defect level related to metallic impurities is identified. Electron irradiation studies reveal that this level originates from a complex formed by a reaction between Cu and C _iO_i. The interaction between copper and implantation induced defects results in a copper decoration of the defect concentration versus depth profile