High-speed 6.1 Angstrom InAs HBT devices and circuits

Author

Thomas, S., III ; Elliott, K. ; Chow, D.H. ; Rajavel, R. ; Deelman, P. ; McLaughlin, D. ; Boegeman, Y. ; Fields, C.H.

Author_Institution

HRL Lab., Malibu, CA, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

344

Lastpage

345

Abstract

The paper presents high-speed 6.1 Angstrom InAs HBT devices and circuits highlighting areas where HBT compare favorably to other devices as well as pointing out areas where technology requires additional development. The major differences between InAs technology and other HBT technologies is the lack of suitable lattice-matched semi-insulating substrate for InAs. The circuit consist of 62 transistor, sub-collector resistors and two layers of metal interconnect. A key parameter for determining the speed of an HBT is the base resistance. A base sheet resistance of 490 Ω/sq was measured from a 400Å thick InAS layer doped p-type with Be at 1.5×10¹⁹ cm^-3 and good gain is achieved at this doping level.

Keywords

III-V semiconductors; beryllium; bipolar integrated circuits; doping profiles; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; 6.1 Å; InAs:Be; base sheet resistance; high-speed 6.1 Angstrom InAs HBT devices; high-speed integrated circuits; lattice matched semi insulating substrate; metal interconnect; sub-collector resistors; thick InAs layer; Buffer layers; Doping; Electrical resistance measurement; Electron mobility; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit interconnections; Integrated circuit technology; Laboratories; Resistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272124

Filename

1272124