DocumentCode :
2617510
Title :
Effects of bulk and MOCVD thin film dielectric cover on the characteristics of microstrip interconnect structures
Author :
Joshi, K.K. ; Pollard, R.D. ; Postoyalko, V.
Author_Institution :
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
fYear :
1993
fDate :
20-22 Oct 1993
Firstpage :
22
Lastpage :
24
Abstract :
A microstrip with dielectric cover is fabricated with metal-organic chemical vapor deposition (MOCVD) Al2O3 thin film. Frequency shift and 137% to 259% increase in the Q factor of microstrip resonators in the presence of dielectric thin film are measured between 2-26GHz
Keywords :
Q-factor; alumina; chemical vapour deposition; dielectric thin films; frequency stability; microstrip resonators; packaging; 2 to 26 GHz; Al2O3 thin film; MOCVD thin film dielectric cover; Q factor; dielectric thin film; frequency shift; metal-organic chemical vapor deposition; microstrip interconnect structures; microstrip resonators; Dielectric materials; Dielectric measurements; Dielectric substrates; Dielectric thin films; Frequency measurement; MOCVD; Microstrip resonators; Q factor; Q measurement; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Performance of Electronic Packaging, 1993
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-1427-1
Type :
conf
DOI :
10.1109/EPEP.1993.394600
Filename :
394600
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2617510
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