• DocumentCode
    2617510
  • Title

    Effects of bulk and MOCVD thin film dielectric cover on the characteristics of microstrip interconnect structures

  • Author

    Joshi, K.K. ; Pollard, R.D. ; Postoyalko, V.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Leeds Univ., UK
  • fYear
    1993
  • fDate
    20-22 Oct 1993
  • Firstpage
    22
  • Lastpage
    24
  • Abstract
    A microstrip with dielectric cover is fabricated with metal-organic chemical vapor deposition (MOCVD) Al2O3 thin film. Frequency shift and 137% to 259% increase in the Q factor of microstrip resonators in the presence of dielectric thin film are measured between 2-26GHz
  • Keywords
    Q-factor; alumina; chemical vapour deposition; dielectric thin films; frequency stability; microstrip resonators; packaging; 2 to 26 GHz; Al2O3 thin film; MOCVD thin film dielectric cover; Q factor; dielectric thin film; frequency shift; metal-organic chemical vapor deposition; microstrip interconnect structures; microstrip resonators; Dielectric materials; Dielectric measurements; Dielectric substrates; Dielectric thin films; Frequency measurement; MOCVD; Microstrip resonators; Q factor; Q measurement; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Performance of Electronic Packaging, 1993
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    0-7803-1427-1
  • Type

    conf

  • DOI
    10.1109/EPEP.1993.394600
  • Filename
    394600
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2617510