Electrical characterization of the subthreshold damage in ion implanted p-type silicon

Author

Fatima, S. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

158

Lastpage

161

Abstract

The residual electrically active defects in implanted and annealed p-type Si (boron doped) have been studied with capacitance-voltage (CV) measurements and deep level transient spectroscopy (DLTS). P-type Si is implanted with 5.5 MeV Si ions to doses between 10¹² and 10 ¹⁴ cm^-2. These samples were annealed at elevated temperatures (900°C). A critical dose is established indicating the transformation between point defects in to extended defects in contrast to n-type Si where a critical dose has been established for same species and under same annealing conditions below which no electrically active defects are seen

Keywords

annealing; deep level transient spectroscopy; defect states; elemental semiconductors; ion implantation; silicon; 5.5 MeV; 900 C; Si; annealing; boron doped p-type Si; capacitance-voltage measurement; critical dose; deep level transient spectroscopy; extended defect; ion implantation; point defect; residual electrically active defect; subthreshold damage; Boron; Capacitance measurement; Capacitance-voltage characteristics; Electric variables measurement; Fabrication; Ion implantation; Rapid thermal annealing; Silicon; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610096

Filename

610096