• DocumentCode
    2617523
  • Title

    6.2 Å In0.2Al0.8Sb/InAs0.7Sb0.3 HEMTs for low voltage high-frequency applications

  • Author

    Papanicolaou, N.A. ; Tinkham, B.P. ; Boos, J.B. ; Bennett, B.R. ; Bass, R. ; Park, D.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    352
  • Abstract
    The paper presents the performance of In0.2Al0.8Sb/InAs0.7Sb0.3 HEMTs that are fabricated for the first time in a uniform alloy of InAs0.7Sb0.3 as the channel layer with adjacent In0.2Al0.8Sb barrier layers, with a lattice constant of 6.2Å. The paper also presents the cross-sectional view of the material structure used in the fabrication process, X-ray analysis spectrum of the material structure, diffraction peaks of the layers, drain characteristics of HEMT and gate transfer characteristics as a function of gate bias. The addition of Sb to the InAs channel offers the possibility of improvement in low-voltage high-frequency applications.
  • Keywords
    III-V semiconductors; X-ray diffraction; aluminium compounds; high electron mobility transistors; indium compounds; lattice constants; low-power electronics; 6.2 Å; HEMT performance; In0.2Al0.8Sb barrier layers; In0.2Al0.8Sb-InAs0.7Sb0.3; In0.2Al0.8Sb/InAs0.7Sb0.3 HEMT; InAs0.7Sb0.3 channel layers; X-ray analysis spectrum; diffraction peaks; lattice constant; low-voltage high-frequency applications; material structure; Art; Electron mobility; Fabrication; Gallium arsenide; HEMTs; Heterojunctions; Laboratories; Lattices; MODFETs; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1272130
  • Filename
    1272130
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2617523