Latest advances in high voltage, drift free 4H-SiC p-i-n diodes

Author

Das, Mrinal K. ; Sumakeris, Joseph J. ; Krishnaswami, Sumithra ; Paisley, Michael J. ; Agarwal, Anant K. ; Powell, Adrian

Author_Institution

Cree Inc., Durham, NC, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

364

Lastpage

365

Abstract

The 4H-SiC PiN diode is an attractive choice as a high power rectifier. 4H-SiC material technology has advanced to allow the realization of high power PiN diodes. In order to fabricate PiN diodes, nitrogen doped epilayers were grown on conducting 4HN SiC substrates. Stacking fault affect the device performance. Blocking capability, forward and reverse characteristics are explained. Long term forward voltage stability measurements were made on these devices by applying a constant forward current density.

Keywords

current density; p-i-n diodes; semiconductor epitaxial layers; silicon compounds; stacking faults; wide band gap semiconductors; 4H-SiC p-i-n diodes; 4HN SiC substrates; SiC; blocking capability; forward current density; forward voltage stability; high power PiN diodes; nitrogen doped epilayers; power rectifier; reverse voltage stability; stacking fault; Current measurement; Density measurement; Materials science and technology; Nitrogen; P-i-n diodes; Rectifiers; Silicon carbide; Stability; Stacking; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272137

Filename

1272137