DocumentCode
2617742
Title
Fundamentals of high-field electron transport in nitride semiconductors for terahertz applications
Author
Kim, K.W. ; Sokolov, V.N. ; Kochelap, V.A. ; Korotyeyev, V.V. ; Woolard, D.L.
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
378
Lastpage
379
Abstract
In this report, we discuss the basic properties of transient hot-electron transport and high-frequency conductivity in group-III nitrides that determine their capability for applications in THz frequency range. Bulk samples, ultra-short diodes as well as quantum heterostructures are considered.
Keywords
III-V semiconductors; aluminium compounds; electrical conductivity; gallium compounds; high-frequency effects; semiconductor diodes; semiconductor heterojunctions; submillimetre wave diodes; wide band gap semiconductors; AlGaN-GaN; group-III nitrides; high-field electron transport; high-frequency conductivity; nitride semiconductors; quantum heterostructures; transient hot-electron transport; ultra-short diodes; Conductivity; Electron optics; Frequency estimation; Geometrical optics; Optical pumping; Optical scattering; Particle scattering; Phonons; Stimulated emission; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272143
Filename
1272143
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