A system-level analysis of Schottky diodes for incoherent THz imaging arrays

Author

Brown, E.R.

Author_Institution

California Univ., Los Angeles, CA, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

380

Lastpage

381

Abstract

This paper examines modern Schottky diodes as direct detectors in a focal-plane imaging array using a model that accounts for the following: small-signal impedance and THz coupling; square-law rectification parameterised by ideality factor and temperature; thermal, shot, flicker and burst noise; and post-detection center frequency and integration time. The model computes the noise equivalent power (NEP), noise-equivalent delta temperature (NEΔT), and image acquisition time (IAT).

Keywords

Schottky diodes; burst noise; flicker noise; semiconductor device noise; shot noise; submillimetre wave imaging; thermal noise; Schottky diodes; THz coupling; burst noise; flicker noise; focal plane imaging array; image acquisition time; incoherent THz imaging arrays; noise equivalent delta temperature; noise equivalent power; post detection center frequency; shot noise; small signal impedance; square-law rectification; system-level analysis; thermal noise; 1f noise; Detectors; Gunshot detection systems; Image analysis; Impedance; Power system modeling; Schottky diodes; Sensor arrays; Temperature; Thermal factors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272144

Filename

1272144