DocumentCode
2617779
Title
Terahertz emission using quantum dots and microcavities
Author
Solomon, Glenn S.
Author_Institution
Solid-State Photonics Lab., Stanford Univ., CA, USA
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
382
Abstract
This article discusses about material and device-design considerations for extending semiconductor lasers to the tetrahertz regime. Semiconductor-based laser sources have recently become available in the THz regime using a quantum cascade laser design. A new set of device structures based on a semiconductor quantum dot gain medium is discussed.
Keywords
high-frequency effects; microcavities; quantum cascade lasers; microcavities; quantum cascade laser design; semiconductor lasers; semiconductor quantum dot gain medium; semiconductor-based laser sources; terahertz emission; Laser transitions; Microcavities; Optical design; Quantum cascade lasers; Quantum dot lasers; Quantum dots; Semiconductor lasers; Solid state circuits; Spontaneous emission; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272145
Filename
1272145
Link To Document