• DocumentCode
    2617887
  • Title

    Designing Memory Subsystems Resilient to Process Variations

  • Author

    Bennaser, Mahmoud ; Guo, Yao ; Mortiz, Csaba Andras

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA
  • fYear
    2007
  • fDate
    9-11 March 2007
  • Firstpage
    357
  • Lastpage
    363
  • Abstract
    As technology scales, more sophisticated fabrication processes cause variations in many different parameters in the device. These variations could severely affect the performance of processors by making the latency of circuits less predictable and thus requiring conservative design approaches. In this paper, we use Monte-Carlo simulations in addition to worst-case circuit analysis to establish the overall delay due to process variations in a cache subsystem under both typical and worst-case conditions. The distribution of a cache critical-path-delay in the typical scenario was determined by performing Monte-Carlo simulations at different supply voltages, threshold voltages, and transistor lengths on a complete cache design. In addition to establishing the delay variation, we present an adaptive variable-cycle-latency cache architecture that mitigates the impact of process variations on access latency by closely following the typical latency behavior rather than assuming a conservative worst-case design-point. Simulation results show that our adaptive data cache can achieve a 9% to 21% performance improvement in a superscalar processor, on the SPEC2 000 applications studied, compared to a conventional design. Additional performance improvement potential exists in processors where the data cache access is on the critical path, by allowing a more aggressive clock rate.
  • Keywords
    Monte Carlo methods; cache storage; circuit simulation; Monte-Carlo simulations; adaptive variable-cycle-latency cache architecture; cache critical-path-delay; cache subsystem; data cache access; memory subsystem design; superscalar processor; worst-case circuit analysis; CMOS process; CMOS technology; Circuit analysis; Circuit simulation; Clocks; Computational geometry; Delay estimation; Fabrication; Memory architecture; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI, 2007. ISVLSI '07. IEEE Computer Society Annual Symposium on
  • Conference_Location
    Porto Alegre
  • Print_ISBN
    0-7695-2896-1
  • Type

    conf

  • DOI
    10.1109/ISVLSI.2007.40
  • Filename
    4208940