DocumentCode
2617967
Title
Electronic transport in carbon nanotube field-effect transistors
Author
Appenzeller, J.
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
410
Lastpage
411
Abstract
In this paper, we study about the electronic transport in carbon nanotube field-effect transistors. Intrinsic properties like electron mobility, band structure and interconnections of semiconducting carbon nanotubes are compared with other semiconductors.
Keywords
carbon nanotubes; electron mobility; field effect transistors; interconnections; nanotube devices; C; band structure; carbon nanotube field-effect transistors; electron mobility; electronic transport; interconnections; intrinsic properties; semiconducting carbon nanotubes; CMOS technology; CNTFETs; Carbon nanotubes; Chemical technology; Electron tubes; FETs; Nanoscale devices; Scattering; Semiconductivity; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272157
Filename
1272157
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