• DocumentCode
    2618176
  • Title

    An improved shift-and-ratio Leff extraction method for MOS transistors with halo/pocket implants

  • Author

    Fathi, E. ; Afzal, B. ; Fathipour, M. ; Khakifirooz, A.

  • Author_Institution
    Dept. of ECE, Tehran Univ., Iran
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    430
  • Lastpage
    431
  • Abstract
    The use of original shift-and-ratio method for Leff extraction of MOS transistors with halo/pocket implants results in systematic errors for Leff. A modification of the original method has been proposed and tested by simulation. The values of Leff generated by this method are more reasonable than the original shift-and-ratio method.
  • Keywords
    MOSFET; semiconductor device models; MOS transistors; halo-pocket implants; shift-and-ratio Leff extraction method; systematic errors; Degradation; Implants; Laboratories; MOSFETs; Modems; Monitoring; Scattering; System testing; Temperature; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1272168
  • Filename
    1272168
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2618176