DocumentCode :
2618176
Title :
An improved shift-and-ratio Leff extraction method for MOS transistors with halo/pocket implants
Author :
Fathi, E. ; Afzal, B. ; Fathipour, M. ; Khakifirooz, A.
Author_Institution :
Dept. of ECE, Tehran Univ., Iran
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
430
Lastpage :
431
Abstract :
The use of original shift-and-ratio method for Leff extraction of MOS transistors with halo/pocket implants results in systematic errors for Leff. A modification of the original method has been proposed and tested by simulation. The values of Leff generated by this method are more reasonable than the original shift-and-ratio method.
Keywords :
MOSFET; semiconductor device models; MOS transistors; halo-pocket implants; shift-and-ratio Leff extraction method; systematic errors; Degradation; Implants; Laboratories; MOSFETs; Modems; Monitoring; Scattering; System testing; Temperature; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272168
Filename :
1272168
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2618176
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