Fabrication and characterization of precisely graded parabolic quantum wells using monolayer deposition

Author

Kane, B.E. ; Facer, G.R. ; Clark, R.G. ; Pfeiffer, L.N. ; West, K.W. ; Boebinger, G.S.

Author_Institution

Semicond. Nanofabrication Facility, New South Wales Univ., Sydney, NSW, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

175

Lastpage

178

Abstract

We describe the fabrication and low-temperature characterization of high quality parabolic quantum wells, grown with GaAs/Al_xGa_1-xAs molecular beam epitaxy using the novel method of depositing single monolayers of either GaAs or Al_xGa_1-xAs so as to produce an average parabolic potential. The high quality of these wells is attested to by the appearance of magnetoresistance oscillations associated with the population of the second subband, observable at low temperatures when the well is oriented nearly parallel to the magnetic field, a phenomenon not previously observed in parabolic quantum wells

Keywords

III-V semiconductors; Shubnikov-de Haas effect; aluminium compounds; electron gas; gallium arsenide; interface states; magnetoresistance; molecular beam epitaxial growth; monolayers; semiconductor growth; semiconductor quantum wells; GaAs-AlGaAs; GaAs/Al_xGa_1-xAs molecular beam epitaxy; Shubnikov de Haas oscillations; average parabolic potential; fabrication; high quality; high quality parabolic quantum wells; low-temperature characterization; magnetic field; magnetoresistance oscillations; monolayer deposition; precisely graded parabolic quantum wells; second subband; three dimensional electron gas; Artificial intelligence; Australia; Electrons; Fabrication; Gallium arsenide; Magnetic confinement; Magnetic fields; Magnetoresistance; Nanofabrication; Potential well;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610100

Filename

610100