High performance AlGaN/GaN HEMTs with a field plated gate structure

Author

Chini, Alessandro ; Buttari, Dario ; Coffie, Robert ; Shen, Likun ; Heikman, Sten ; Chakraborty, Arpan ; Keller, Stacia ; Mishra, Umesh K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

434

Lastpage

435

Abstract

Record performance at 4 GHz has been obtained by using field plated AlGaN/GaN HEMTs. For devices on sapphire substrate, high power density (12 W/mm) as well as high efficiency (58%) have been measured. Devices on SiC substrate yielded power density up to 18.8 W/mm and efficiency up to 74% (with 6 W/mm). Excellent linearity performance was also achieved: while maintaining a carrier to third-order intermodulation ratio of 30 dBc device yielded 2.4 W/mm with 53% PAE.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; intermodulation; wide band gap semiconductors; 4 GHz; Al₂O₃; AlGaN-GaN; AlGaN/GaN HEMT; SiC; SiC substrate; field plated gate structure; high electron mobility transistor; linearity performance; power density; sapphire substrate; third order intermodulation; Aluminum gallium nitride; Electron traps; Gallium nitride; HEMTs; MODFETs; Power measurement; Pulse measurements; RF signals; Radio frequency; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272169

Filename

1272169