Title :
Optical properties of δ-doped GaAs nipi super-lattices
Author :
Johnston, M.B. ; Gal, M. ; Li, G. ; Jagadish, C.
Author_Institution :
New South Wales Univ., Sydney, NSW, Australia
Abstract :
A δ-doped GaAs nipi super-lattice has been examined using photoluminescence spectroscopy. Intensity dependent photoluminescence spectra were measured over 5 orders of magnitude (1 kW/cm2-8 mW/cm2). A significant shift in the photoluminescence emission maxima (155 meV) was evident over this range. Time resolved photoluminescence spectra were observable over 6 temporal orders of magnitude (10 ns-10 ms). The strong photoluminescence signal over such a long decay time allowed the relaxation of the nipi effective bandgap after optical excitation to be observed
Keywords :
III-V semiconductors; energy gap; gallium arsenide; photoluminescence; semiconductor superlattices; time resolved spectra; δ-doped GaAs nipi super-lattices; 10 ns to 10 ms; GaAs; intensity dependent photoluminescence spectra; long decay time; nipi effective bandgap relaxation; optical excitation; optical properties; photoluminescence emission maxima; photoluminescence spectroscopy; strong photoluminescence signal; time resolved photoluminescence spectra; Doping profiles; Epitaxial growth; Gallium arsenide; Optical pulses; Optical superlattices; Photoluminescence; Photonic band gap; Semiconductor device doping; Semiconductor superlattices; Spectroscopy;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610101
