Microwave heating for advanced semiconductor processing

Author

Booske, John H.

Author_Institution

Wisconsin Univ., Madison, WI, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

456

Lastpage

457

Abstract

The microwave power is successfully utilized to rapidly heat a variety of materials, including Si at 150 °C/s to 1200 °C and SiC at 400 °C/s to 2000 °C. In this paper with Si microwave RTP, we have demonstrated ultra shallow junctions that exceed lamp-based RTP capabilities and satisfy the 90 nm technology node. The comparative experiment has been conducted between microwave RTP and optical lamp RTP. Comparison sheet resistance-junction depth curve for microwave and lamp-based p-type annealing results and time-temperature profile for a high-power microwave spike annealing are studied by experiments.

Keywords

elemental semiconductors; microwave heating; rapid thermal annealing; semiconductor technology; silicon; silicon compounds; wide band gap semiconductors; 150 to 1200 degC; 400 to 2000 degC; Si; SiC; junction depth curve; lamp based RTP; microwave heating; microwave power; rapid thermal processing; semiconductor processing; sheet resistance; ultra shallow junctions; Atom optics; Chemicals; Electromagnetic heating; Fabrication; Implants; Lamps; Lighting; Optical films; Rapid thermal annealing; Rapid thermal processing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272185

Filename

1272185